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 DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D130
BZV85 series Voltage regulator diodes
Product specification Supersedes data of 1996 Apr 26 1999 May 11
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES * Total power dissipation: max. 1.3 W * Tolerance series: approx. 5% * Working voltage range: nom. 3.6 to 75 V (E24 range) * Non-repetitive peak reverse power dissipation: max. 60 W. APPLICATIONS * Stabilization purposes. DESCRIPTION
BZV85 series
Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx. 5% tolerance range. The series consists of 33 types with nominal working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75).
handbook, halfpage
k
a
MAM241
The diodes are type branded.
Fig.1 Simplified outline (SOD66; DO-41) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM PARAMETER continuous forward current non-repetitive peak reverse current tp = 100 s; square wave; Tj = 25 C prior to surge; see Fig.3 tp = 10 ms; half sinewave; Tj = 25 C prior to surge Ptot total power dissipation Tamb = 25 C; lead length 10 mm; note 1 note 2 PZSM Tstg Tj Notes 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. 2. If the leads are kept at Ttp = 55 C at 4 mm from body. ELECTRICAL CHARACTERISTICS Total series Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 50 mA; see Fig.4 MAX. 1 UNIT V non-repetitive peak reverse power dissipation storage temperature junction temperature tp = 100 s; square wave; Tj = 25 C prior to surge CONDITIONS - see Table "Per type" see Table "Per type" - - - -65 - 1 1.3 60 +200 200 W W W C C MIN. MAX. 500 UNIT mA
1999 May 11
2
1999 May 11 3
Philips Semiconductors
Per type Tj = 25 C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif () at IZtest TEST DIODE CAP. TEMP. COEFF. CURRENT Cd (pF) SZ (mV/K) at IZtest IZtest (mA) at f = 1 MHz; see Figs 5 and 6 VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (A) MIN. 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28.0 MAX. 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32.0 MAX. 15 15 13 13 10 7 4 3.5 3 5 5 8 10 10 10 15 15 20 24 25 30 40 45 MIN. -3.5 -3.5 -2.7 -2.0 -0.5 0 0.6 1.3 2.5 3.1 3.8 4.7 5.3 6.3 7.4 8.9 10.7 11.8 13.6 16.6 18.3 20.1 22.4 MAX. -1.0 -1.0 0 +0.7 +2.2 2.7 3.6 4.3 5.5 6.1 7.2 8.5 9.3 10.8 12.0 13.6 15.4 17.1 19.1 22.1 24.3 27.5 32.0 60 60 50 45 45 45 35 35 35 25 25 25 20 20 20 15 15 15 10 10 10 8 8 MAX. 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 50 50 MAX. 50 10 5 3 3 2 2 2 1 0.7 0.7 0.2 0.2 0.2 0.2 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1.0 1.0 1.0 1.0 2.0 2.0 3.0 4.0 4.5 5.0 6.5 7.0 7.7 8.4 9.1 10.5 11.0 12.5 14.0 15.5 17 19 21 VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM at tp = 100 s; Tamb = 25 C MAX. (A) 8.0 8.0 8.0 8.0 8.0 8.0 7.0 7.0 5.0 5.0 4.0 4.0 3.0 3.0 3.0 2.5 1.75 1.75 1.75 1.5 1.5 1.2 1.2 at tp = 10 ms; Tamb = 25 C MAX. (mA) 2000 1950 1850 1800 1750 1700 1620 1550 1500 1400 1340 1200 1100 1000 900 760 700
Voltage regulator diodes
BZV85CXXX
BZV85 series
600 540 500 450 400 380
Product specification
1999 May 11 4
Philips Semiconductors
BZV85CXXX
WORKING VOLTAGE VZ (V) at IZtest
DIFFERENTIAL RESISTANCE rdif () at IZtest
DIODE CAP. TEMP. COEFF. TEST Cd (pF) SZ (mV/K) CURRENT at IZtest IZtest (mA) at f = 1 MHz; VR = 0 V see Figs 5 and 6
REVERSE CURRENT at REVERSE VOLTAGE IR (A) VR (V) 23 25 27 30 33 36 39 43 48 53
Voltage regulator diodes
NON-REPETITIVE PEAK REVERSE CURRENT IZSM at tp = 100 s; Tamb = 25 C MAX. (A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.4 0.35 0.3 at tp = 10 ms; Tamb = 25 C MAX. (mA) 350 320 296 270 246 226 208 186 171 161
MIN. 33 36 39 43 47 51 56 62 68 75 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0
MAX. 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 80.0
MAX. 45 50 60 75 100 125 150 175 200 225
MIN. 24.8 27.2 29.6 34.0 37.4 40.8 46.8 52.2 60.5 66.5
MAX. 35.0 39.9 43.0 48.3 52.5 56.5 63.0 72.5 81.0 88.0 8 8 6 6 4 4 4 4 4 4
MAX. 45 45 45 40 40 40 40 35 35 35
MAX. 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05
BZV85 series
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. GRAPHICAL DATA PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 4 mm; see Fig.2 lead length10 mm; note 1
BZV85 series
VALUE 110 175
UNIT K/W K/W
103 handbook, full pagewidth Rth j-tp (K/W) =1 0.75 0.50 0.33 0.20 0.10 0.05
MBG929
102
10
0.02 0.01 0 1 10-2
tp T
=
tp T
10-1
1
10
102
103
tp (ms)
104
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.
1999 May 11
5
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV85 series
102 handbook, halfpage IZSM (A)
(1)
MBG802
handbook, halfpage
300
MBG925
IF (mA) 200
10
1
(2)
(1)
(2)
100
10-1 1
10
VZnom (V)
102
0 0 0.5 VF (V) 1.0
(1) tp = 10 s; half sinewave; Tamb = 25 C. (2) tp = 10 ms; half sinewave; Tamb = 25 C.
(1) Tj = 200 C. (2) Tj = 25 C.
Fig.3
Non-repetitive peak reverse current as a function of the nominal working voltage.
Fig.4
Forward current as a function of forward voltage; typical values.
MBG926
handbook, halfpage
10
handbook, halfpage
100
MBG800
SZ (mV/K) 5
SZ (mV/K)
(1)
10 9V1 8V2 7V5 6V8
80
(2)
60 6V2 5V6 5V1 4V7 4V3 40
(3)
0
20
3V6 3V9 -5 0 0 25 IZ (mA) 50 1 IZ = IZtest; Tj = 25 to 150 C. (1) Maximum values. (2) Typical values. (3) Minimum values. 10 VZnom (V) 102
BZV85-C3V6 to C10. Tj = 25 to 150 C. For types above 7.5 V the temperature coefficient is independent of current; see Table "Per type".
Fig.5
Temperature coefficient as a function of working current; typical values.
Fig.6
Temperature coefficient as a function of nominal working voltage.
1999 May 11
6
Philips Semiconductors
Product specification
Voltage regulator diodes
PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads
BZV85 series
SOD66
(1)
k
a b
D
L
G1
L
DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.81 D max. 2.6 G1 max. 4.8 L min. 28 0 2 scale 4 mm
Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD66 REFERENCES IEC JEDEC DO-41 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1999 May 11
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/02/pp8
Date of release: 1999 May 11
Document order number:
9397 750 05929


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